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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15030/D NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 - 1600 MHz. * Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power -- 30 Watts Gain -- 9 dB Min @ 30 Watts (PEP) Efficiency -- 30% Min @ 30 Watts (PEP) Intermodulation Distortion -- - 30 dBc Max @ 30 Watts (PEP) * Third Order Intercept Point -- 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc * Characterized with Series Equivalent Large-Signal Parameters from 1400-1600 MHz * Characterized with Small Signal S-Parameters from 1000 - 2000 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vdc, at Rated Output Power * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Symbol Min MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C-01, STYLE 1 Value 25 60 4 10 125 0.71 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Max 1.40 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 ) V(BR)CEO V(BR)CES V(BR)CER 25 60 30 29 64 52 -- -- -- Vdc Vdc Vdc (continued) REV 7 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF15030 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS -- continued Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)EBO ICES 4 -- 5 -- -- 10 Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) hFE 20 35 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1 MHz) Cob -- 38 -- pF FUNCTIONAL TESTS (Figure 12) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Gpe 9.0 9.6 -- dB 30 34 -- % IMD -- - 34 - 30 dBc IRL 12 15 -- dB No Degradation in Output Power TYPICAL CHARACTERISTICS 45 40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 0 1 VCC = 26 Vdc ICQ = 125 mA f = 1490 MHz Single Tone 2 3 Pin, INPUT POWER (WATTS) 4 5 Gpe Pout 10.3 10.2 Pout , OUTPUT POWER (WATTS) 10.1 10.0 9.9 9.8 9.7 9.6 9.5 9.4 G pe , GAIN (dB) 40 35 30 25 20 15 10 5 1.5 W VCC = 26 Vdc ICQ = 125 mA Single Tone 2.5 W Pin = 3.5 W 0 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 f, FREQUENCY (MHz) Figure 1. Output Power & Power Gain versus Input Power Figure 2. Output Power versus Frequency MRF15030 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) - 20 3rd Order - 30 5th - 40 7th - 50 VCC = 26 Vdc ICQ = 125 mA f1 = 1490 MHz f2 = 1490.1 MHz 0 5 20 30 15 25 Pout, OUTPUT POWER (WATTS) PEP 10 35 40 G pe , POWER GAIN (dB) 12 11 10 9 8 7 6 5 4 3 2 1 0 1450 1460 60 Gpe 50 40 30 1.75 20 1.50 10 1.25 VSWR 0 1.00 - 60 1470 1480 1490 1500 f, FREQUENCY (MHz) 1510 1520 1530 Figure 3. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) - 25 - 30 - 35 - 40 - 45 - 50 - 55 0.01 125 mA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 0.10 1.0 10 100 ICQ = 75 mA G pe , POWER GAIN (dB) 10 9 8 7 Figure 4. Performance in Broadband Circuit ICQ = 400 mA 250 mA 125 mA 6 5 4 0.01 75 mA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 250 mA 400 mA 0.10 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 11 10.5 G pe , POWER GAIN (dB) 10 Gain 9.5 9 8.5 8 18 IMD Pout = 30 W (PEP) ICQ = 125 mA f1 = 1490 MHz f2 = 1490.1 MHz 20 22 24 26 VCE, COLLECTOR VOLTAGE (Vdc) - 35 - 30 - 25 Figure 6. Power Gain versus Output Power 60 50 Pout , OUTPUT POWER (dBm) 40 30 20 10 0 -10 Third Order VCC = 24 Vdc IC = 2.5 A f1 = 1490 MHz f2 = 1490.1 MHz Fundamental - 20 - 30 - 40 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 28 - 40 Figure 7. Power Gain and Intermodulation Distortion versus Collector Voltage Figure 8. Class A Third Order Intercept Point MOTOROLA RF DEVICE DATA MRF15030 3 INPUT VSWR VCC = 26 Vdc Pout = 30 W (PEP) ICQ = 125 mA , COLLECTOR EFFICIENCY (%) TYPICAL CHARACTERISTICS 3 I C , COLLECTOR CURRENT (Adc) MTBF Limited 2.5 2 1.5 1 TJ = 175C 0.5 0 Tflange = 75 C Tflange = 100C Breakdown Limited MTBF FACTOR (HOURS x AMPS 2 ) 109 108 107 106 105 104 100 0 4 12 20 16 VCE, COLLECTOR VOLTAGE (Vdc) 8 24 28 120 140 180 220 160 200 TJ, JUNCTION TEMPERATURE (C) 240 260 Figure 9. DC Safe Operating Area Figure 10. MTBF Factor versus Junction Temperature The above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application. 1.5 1.4 1.55 1.45 f = 1.6 GHz Zin ZOL* 1.5 f = 1.6 GHz 1.4 1.55 1.45 Zo = 10 f (GHz) 1.40 1.45 1.50 1.55 1.60 Zin () 1.15 + j4.25 1.15 + j4.55 1.20 + j4.80 1.45 + j5.15 1.89 + j5.25 Z*OL () 1.87 + j0.78 1.67 + j0.78 1.47 + j0.78 1.27 + j0.78 1.00 + j0.78 Z*OL = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 30 Watts (PEP), VCC = 26 Volts, ICQ = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz MRF15030 4 MOTOROLA RF DEVICE DATA Table 1. Small Signal S Parameters at VCE = 24 Vdc, IC = 2.5 Adc f MHz 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 |S11| 0.983 0.984 0.978 0.975 0.975 0.969 0.963 0.955 0.945 0.933 0.915 0.889 0.856 0.833 0.820 0.839 0.872 0.909 0.937 0.957 0.970 S11 173 172 172 171 171 170 169 169 168 167 166 166 166 168 171 174 175 176 175 174 173 |S21| 0.366 0.367 0.367 0.373 0.382 0.391 0.408 0.428 0.452 0.487 0.525 0.572 0.618 0.654 0.654 0.600 0.517 0.435 0.357 0.296 0.247 S21 49 46 43 40 36 33 29 25 20 13 6 -3 -16 - 30 - 48 - 66 - 81 - 94 -104 -112 -119 |S12| 0.006 0.007 0.007 0.007 0.008 0.007 0.008 0.009 0.008 0.009 0.009 0.009 0.009 0.010 0.010 0.010 0.010 0.010 0.011 0.012 0.012 S12 36 33 33 30 31 27 21 20 7 1 -8 -18 - 35 - 54 - 86 -120 -152 -176 159 148 136 |S22| 0.890 0.893 0.888 0.885 0.886 0.881 0.879 0.879 0.873 0.875 0.875 0.877 0.887 0.901 0.918 0.930 0.932 0.925 0.924 0.917 0.915 S22 178 178 178 178 177 177 177 177 177 178 178 178 178 178 178 177 176 174 173 173 173 Vbias R1 D1 Q1 + C2 C3 R2 Q2 R3 B2 B1 C5 L1 C7 R4 Q3 D2 B3 L2 B4 C11 C10 DUT C6 C1 C4 C8 C9 C12 VCC + C13 C14 RF Output N2 R5 R6 RF Input N1 B1, B4 B2, B3 C1 C2 C3, C14 C4, C8 C5, C11 C6, C12 C7, C10 C9 C13 Long Bead, Fair Rite Short Bead, Fair Rite 0.3 pF, B Case Chip Capacitor, ATC 220 F, Electrolytic Capacitor, Mallory 0.1 F, Chip Capacitor, Kemit 0.8 to 8 pF, Variable Capacitor, Johanson 1800 pF, Chip Capacitor, Kemit 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1.7 pF, B Case Chip Capacitor, ATC 470 F, Electrolytic Capacitor, Mallory D1 D2 L1, L2 N1, N2 Q1 Q2, Q3 R1 R2 R3, R6 R4 R5 Board Surface Mount Diode, Motorola Light Emitting Diode, Industrial Devices 3 Turn, 20 AWG, 0.126 ID Choke Type N Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x 330 , 1/8 Watt Chip Resistors in Parallel, Rohm 100 , 1/8 Watt, Chip Resistor, Rohm 4 x 38 , 1/8 Watt, Chip Resistors in Parallel, Rohm 39 , 1/8 Watt, Chip Resistor, Rohm 22 K, 1/8 Watt, Chip Resistor, Rohm Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 12. Class AB Broadband Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15030 5 V Supply R5 R1 Q1 R2 Q2 R6 R9 R3 R4 R7 R8 + C2 C3 B1 C6 L1 RF Input N1 C5 C4 C7 C9 C10 DUT C12 B2 C8 B3 L2 B4 C11 RF Output N2 VCC + C13 C14 R10 VCC + C1 B1, B4 B2, B3 C1, C2 C3, C14 C4 C5, C12 C6, C11 C7, C9 C8, C10 C13 L1, L2 N1, N2 Long Bead, Fair Rite Short Bead, Fair Rite 100 F, Electrolytic Capacitor, Mallory 0.1 F, Chip Capacitor, Kemit 1.3 pF, B Case Chip Capacitor, ATC 18 pF, B Case Chip Capacitor, ATC 1800 pF, Chip Capacitor, Kemit 0.8 to 8 pF, Variable Capacitor, Johanson 51 pF, Chip Capacitor, Murata Erie 470 F, Electrolytic Capacitor, Mallory 3 Turn, 20 AWG, 0.126 ID Choke Type N Flange Mount RF Connector, Omni Spectra Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt, Chip Resistor Rohm 500 , 1/4 Watt Potentiometer, State of the Art 4.7 K, 1/8 Watt, Chip Resistor, Rohm 2 x 4.7 K, 1/8 Watt, Chip Resistors in Parallel, Rohm 1.0 , 10 Watt, Resistor, Dale 38 , 1.0 Watt, Resistor 75 , 1/8 Watt, Chip Resistor, Rohm 2 x 10 , 1/8 Watt, Chip Resistors in Parallel, Rohm 4 x 38 , 1/8 Watt, Chip Resistors in Parallel, Rohm Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MRF15030 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U 1 Q 2 PL 0.51 (0.020) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC -B- 3 K 2 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER D N J H C -T- SEATING PLANE DIM A B C D E H J K N Q U E CASE 395C-01 ISSUE A MOTOROLA RF DEVICE DATA MRF15030 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF15030 8 *MRF15030/D* MRF15030/D MOTOROLA RF DEVICE DATA |
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